Strain In Semiconductor Nanowires And Device Integration
نویسندگان
چکیده
One-dimensional nanowires (NWs) are promising materials for future nanodevices owing to their small dimensions and novel properties. After ten years of materials optimization [1], it is now possible with the help of X-rays and synchrotron radiation to draw some preliminary conclusions about the structural requirements necessary to tune the physical properties of demanding devices in terms of strain control and size distribution. The frontiers of information given by diffraction experiments performed at the European Synchrotron Facility will be illustrated by III-V and IV-IV semiconductor devices.
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تاریخ انتشار 2010